Resistive memory device and method of writing data

Details Resistive memory device and method of writing data Resistive memory device and method of writing data

2007-08-24

2010-12-28

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

07859882

ABSTRACT:
A resistive memory device is provided. The resistive memory device includes word lines arranged in M rows, bit lines arranged in N columns, local source lines arranged in M/2 rows, and resistive memory cells arranged in M rows and N columns. Each of the resistive memory cells includes a resistance variable element having a first electrode connected to a corresponding bit line, and a cell transistor having a first terminal connected to a second electrode of the resistance variable element, a second terminal connected to a corresponding local source line, and a control terminal connected to a corresponding word line. The local source line is commonly connected to the second terminals of the cell transistors of the two neighboring rows.

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