Resistive memory cell, method for forming the same and...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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C365S100000, C365S148000, C257S537000, C257SE27006, C257SE27016, C257SE27025, C257SE27035, C257SE27047, C257SE27071, C257SE27101, C257SE21007, C257SE21294, C257SE21496, C438S238000, C438S384000, C438S508000, C438S508000

Reexamination Certificate

active

07348653

ABSTRACT:
A resistive memory cell employs a photoimageable switchable material, which is patternable by actinic irradiation and is reversibly switchable between distinguishable resistance states, as a memory element. Thus, the photoimageable switchable material is directly patterned by the actinic irradiation so that it is possible to fabricate the resistive memory cell through simple processes, and avoiding ashing and stripping steps.

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Ouyang, Jianyong, et al, “Programmable Polymer Thin Film and Non-Volatilve Memory Device”, Nature Materials: vol. 3, Dec. 2004, pp. 918-922.
English language abstract of Japanese Publication No. 2003-068983.
English language abstract of Japanese Publication No. 2004-128486.

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