Resistive memory architectures with multiple memory cells...

Details Resistive memory architectures with multiple memory cells... Resistive memory architectures with multiple memory cells...

2010-02-16

2011-12-13

Phung, Anh (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21006, C257SE21351, C257SE21520, C438S103000, C438S104000, C438S534000, C438S570000

Reexamination Certificate

active

08076195

ABSTRACT:
A resistive memory structure, for example, phase change memory structure, includes one access device and two or more resistive memory cells. Each memory cell is coupled to a rectifying device to prevent parallel leak current from flowing through non-selected memory cells. In an array of resistive memory bit structures, resistive memory cells from different memory bit structures are stacked and share rectifying devices.

REFERENCES:
patent: 6456524 (2002-09-01), Perner et al.
patent: 7145790 (2006-12-01), Kang
patent: 7215568 (2007-05-01), Liaw et al.
patent: 7236393 (2007-06-01), Cho et al.
patent: 7447062 (2008-11-01), Burr et al.
patent: 7502252 (2009-03-01), Fuji et al.
patent: 7660144 (2010-02-01), Bhattacharyya
patent: 7728350 (2010-06-01), Bhattacharyya
patent: 7869257 (2011-01-01), Philipp et al.
patent: 2005/0001232 (2005-01-01), Bhattacharyya
patent: 2006/0067103 (2006-03-01), Ferrant et al.
patent: 2006/0145135 (2006-07-01), Huang et al.
patent: 2006/0246653 (2006-11-01), Bhattacharyya
patent: 2007/0103963 (2007-05-01), Kim et al.
patent: 2007/0153616 (2007-07-01), Kim et al.
patent: 2010/0327249 (2010-12-01), Choi et al.
patent: 1306852 (2003-05-01), None
patent: WO-96-41381 (1996-12-01), None
Hudgens et al., “Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology,”MRS Bulletin, Nov. 2004, pp. 829-832.
Lankhorst et al., “Low-cost and nanoscale non-volatile memory concept for future silicon chips,”Nature Materials, vol. 4, Apr. 2005, pp. 347-352.

Affiliated with

Also associated with

Rating

Resistive memory architectures with multiple memory cells... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistive memory architectures with multiple memory cells..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistive memory architectures with multiple memory cells... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4314592