Resistive load for integrated circuit devices

Details Resistive load for integrated circuit devices Resistive load for integrated circuit devices

1994-10-12

1997-01-14

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257538, 257755, 257904, H01L 21768, H01L 2352

Patent

active

055942695

ABSTRACT:
An integrated circuit structure contains both highly resistive regions and highly conductive interconnect regions in a single layer of polycrystalline silicon. The resistive regions have a smaller cross section than the interconnect regions as a result of partial oxidation. Their thickness and width are reduced from that of the interconnect regions. The partial oxidation leaves an oxide region, derived from polycrystalline silicon, on both the top and sides of the resistive regions.

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Patent Abstracts of Japan, Kokai #63 098145, Toshiaki et al. Pub. Apr. 1988, vol. 012335, Abst. Pub. Sep. 1988, 1 sheet.

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