Resistance variable memory device reducing word line voltage

Details Resistance variable memory device reducing word line voltage Resistance variable memory device reducing word line voltage

2011-07-05

2011-07-05

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S230060, C365S230030

Reexamination Certificate

active

07974118

ABSTRACT:
A resistance variable memory device includes a memory cell array, a sense amplifier circuit, and a column selection circuit. The memory cell array includes a plurality of block units and a plurality of word line drivers, where each of the block units is connected between adjacent word line drivers and includes a plurality of memory blocks. The sense amplifier circuit includes a plurality of sense amplifier units, where each of the sense amplifier units provides a read current to a corresponding block unit and includes a plurality of sense amplifiers. The column selection circuit is connected between the memory cell array and the sense amplifier circuit and selects at least one of the plurality of memory blocks in response to a column selection signal to apply the read current from the sense amplifier circuit to the selected memory block.

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