Resistance variable memory device and method of writing data

Details Resistance variable memory device and method of writing data Resistance variable memory device and method of writing data

2011-03-15

2011-03-15

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S205000

Reexamination Certificate

active

07907437

ABSTRACT:
A method of programming a resistance variable memory cell to a given logic state includes applying a first programming current to the memory cell, executing a verify read of the memory cell by sensing a logic state of the memory cell, and applying a second programming current to the memory cell when the sensed logic state is different than the given logic state, where the second programming current is greater than the first programming current.

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patent: 1020070006608 (2007-01-01), None

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