Resistance random access memory devices and method of...

Details Resistance random access memory devices and method of... Resistance random access memory devices and method of...

2006-04-11

2008-08-05

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S022000

Reexamination Certificate

active

07407858

ABSTRACT:
A method of fabricating a RRAM includes preparing a substrate and forming a bottom electrode ori the substrate. A PCMO layer is deposited on the bottom electrode using MOCVD or liquid MOCVD, followed by a post-annealing process. The deposited PCMO thin film has a crystallized PCMO structure or a nano-size and amorphous PCMO structure. A top electrode is formed on the PCMO layer.

REFERENCES:
patent: 6927120 (2005-08-01), Hsu et al.
patent: 6972239 (2005-12-01), Li et al.
patent: 7098101 (2006-08-01), Li et al.

Affiliated with

Also associated with

Rating

Resistance random access memory devices and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistance random access memory devices and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistance random access memory devices and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4002445