Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-08-30
2011-08-30
Purvis, Sue (Department: 2826)
Static information storage and retrieval
Systems using particular element
Resistive
C355S046000, C257S004000, C257S005000, C257SE27104, C257SE29170
Reexamination Certificate
active
08009454
ABSTRACT:
Provided is a resistance random access memory (RRAM) device and a method of manufacturing the same. A resistance random access memory (RRAM) device may include a lower electrode, a first oxide layer on the lower electrode and storing information using two resistance states, a current control layer made of a second oxide on the first oxide layer and an upper electrode on the current control layer.
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Hwang Hyun-sang
Lee Dong-soo
Lee Myoung-jae
Park Yoon-dong
Harness & Dickey & Pierce P.L.C.
Lopez Fei Fei Yeung
Purvis Sue
Samsung Electronics Co,. Ltd.
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