Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2002-09-30
2010-06-15
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C257SE21577
Reexamination Certificate
active
07737021
ABSTRACT:
The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.
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Apelgren Eric M.
Besser Paul R.
Dakshina-Murthy Srikanteswara
Kepler Nicholas John
Martin Jeremy I.
Globalfoundries Inc.
Trinh Michael
Williams Morgan & Amerson
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