Resist resolution using anisotropic acid diffusion

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S325000, C430S330000

Reexamination Certificate

active

07541137

ABSTRACT:
Methods for increasing the resolution capability and line edge roughness of resists, including chemically amplified resists are disclosed. In order to improve upon the resolution, dipolar species may be coupled to a photoacid group and/or added to the resist, where the dipolar species may influence the direction of acid diffusion. An electric field may be applied to a post-exposure bake process and/or a soft bake process and the resist layer is developed.

REFERENCES:
patent: 6686132 (2003-01-01), Neureuther et al.
patent: 2003/0008246 (2003-01-01), Cheng et al.
patent: 2005/0074706 (2005-04-01), Bristol et al.
patent: WO 2004/057425 (2004-07-01), None
patent: WO 2005038527 (2005-04-01), None
Cheng et al., “ArF imaging modeling by using resist sijulation and pattern matching,”Proc. SPIE, 436:309-318, 2001.
Cheng et al., “Enhancement of resist resolution and sensitivity via applied electric field,”J. Vac. Sci. Technol. B, 18(6):3318-3322, 2000.
Cheng, Mosong, “Comprehensive model for projection photolithography: rigorous, fast and novel processing,”UMI Dissertation Services, University of California: Berkley, 2002.
Croffie et al., “Modeling chemically amplified resists for 193-nm lithography,”Proc. SPIE, 3999:171-180, 2000.
Croffie et al., “Moving boundary transport model for acid diffusion in chemically amplified resists,”J. Vac. Sci. Technol., 17:3339-3344, 1999.
Yuan et al., “Three-dimensional postexposed bake modeling and its applications,”Proc SPIE, 4345:992-1000, 2001.
PCT International Search Report, issued in International Application No. PCT/US2006/062308, dated Oct. 1, 2007.

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