Resist patterns and method of forming resist patterns

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430323, 430325, 430156, 430270, 430311, 430396, 430494, G03C 500

Patent

active

053745027

ABSTRACT:
In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yieldings of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.

REFERENCES:
Microelectronic Engineering 13 (1991) pp. 85-88, Elsevier.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Resist patterns and method of forming resist patterns does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resist patterns and method of forming resist patterns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist patterns and method of forming resist patterns will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2385557

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.