Resist pattern forming process with dry etching

Details Resist pattern forming process with dry etching Resist pattern forming process with dry etching

1987-06-10

1989-05-30

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430167, 430194, 430197, 430311, 430316, 430317, 430318, 430322, 430325, 430326, 430327, 430330, G03F 726

Patent

active

048350893

ABSTRACT:
A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.

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