Resist pattern forming method

Details Resist pattern forming method Resist pattern forming method

1998-02-23

2000-08-08

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

4302701, 430327, G03F 700

Patent

active

061000159

ABSTRACT:
In formation of a resist pattern using a chemical amplification type resist, a conspicuous sparingly soluble surface layer and film reduction are suppressed by controlling the ammonia concentration in the exposure/development atmosphere to the range of 2 to 9 ppb, thereby eliminating formation of a T-shaped resist pattern and film reduction. With this method, formation of the T-shaped resist pattern and film reduction are almost completely eliminated, so a rectangular resist pattern can be obtained, and additionally, the focal depth and dimensional accuracy can be improved.

REFERENCES:
patent: 5240812 (1993-08-01), Conley
patent: 5609688 (1997-03-01), Hayashi
patent: 5833726 (1998-11-01), Kinkead
H. Yoshino, et al., "Investigation of Environmental Stability in Chemically Amplified Resists", Microelectronic Engineering, Vol. 35, pp. 153-156, 1997.

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