Resist material and method for forming resist pattern

Details Resist material and method for forming resist pattern Resist material and method for forming resist pattern

1997-01-15

1997-10-21

Letscher, Geraldine

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

4302701, 430325, 430326, 430330, 430942, G03C 500

Patent

active

056794975

ABSTRACT:
A resist material and a method for forming a resist pattern can be obtained which can improve throughput of pattern formation using both EB lithography and optical beam lithography and which does not suffer from degradation of an alignment mark. This resist material includes a first acid generating agent having a sensitivity only to an EB and a second acid generating agent having a sensitivity to an optical beam. A desired resist pattern is formed by the steps of exposing the resist material to the EB and exposing the resist material to the optical beam.

Affiliated with

Also associated with

Rating

Resist material and method for forming resist pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resist material and method for forming resist pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist material and method for forming resist pattern will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1005567