Resist layer and process for forming resist pattern thereon

Details Resist layer and process for forming resist pattern thereon Resist layer and process for forming resist pattern thereon

1987-12-17

1989-06-27

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430270, 430326, 5253303, 5253591, G03C 500

Patent

active

048429899

ABSTRACT:
A resist layer comprising an organic polymer which is formed by subjecting a methacrylate incorporating fluorine and/or an acrylate incorporating fluorine to a glow-discharge plasma polymerization process.
Further, a process for forming resist pattern on the resist layer comprising a step of forming the resist layer; a step of forming a latent image by exposing the resist layer to an electron beam; and a step of visualizing the latent image by plasma etching.

REFERENCES:
patent: 4421843 (1983-12-01), Hattori et al.
"Plasma Polymerization", Y. Osada et al, Tokyo Chemical Coterie, pp. 191-202 (Sep. 9, 1986).

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