Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Patent
1994-12-13
1997-07-15
McPherson, John A.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
430328, 430313, 430325, 430330, 430396, 15665911, G03C 500, G03F 700
Patent
active
056481985
ABSTRACT:
The present invention is directed to a method of hardening a photoresist formed on a patterned layer during photolithograpy, without causing undesirable shrinkage of the resist features. The patterned layer is disposed on a semiconductor substrate, and the photoresist layer is disposed on the patterned layer in a conventional manner. The photoresist layer is irradiated and developed in a conventional manner to have the desired pattern formed therein. The larger features of the developed photoresist layer are irradiated without heat to thereby harden these features, without irradiating the smaller features. The hardening may be performed by screening the smaller features from the radiation applied to the photoresist layer, or by scanning a beam across only the larger features. The radiation may be UV light or an electron beam. Alternatively, all of the features of the photoresist may be hardened by exposure to a basic atmosphere immediately before, during or immediately after irradiation with UV light. In both cases, the features are hardened without shrinkage. After the features are hardened, the photoresist and patterned layer are etched in a conventional manner to transfer the pattern to the patterned layer.
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Kabushiki Kaisha Toshiba
McPherson John A.
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