Resist developer with ammonium or phosphonium compound and metho

Details Resist developer with ammonium or phosphonium compound and metho Resist developer with ammonium or phosphonium compound and metho

1982-01-21

1983-12-27

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430302, 430309, 430331, 252156, 252528, 252529, 252541, 252547, 252548, G03C 522, G03C 534, G03F 708

Patent

active

044231385

ABSTRACT:
There are disclosed resist developers in which additives selected from certain tetraalkylammonium or phosphonium cations, benzyltrialkylammonium or phosphonium cations, and benzyltriphenylammonium or phosphonium cations, are effective in enhancing the developer selectivity.

REFERENCES:
patent: 3173788 (1965-03-01), Wimmer et al.
patent: 3637384 (1972-01-01), Deutsch et al.
patent: 3868254 (1975-02-01), Wemmers
patent: 4141733 (1979-02-01), Guild
patent: 4174222 (1979-11-01), Komine et al.
patent: 4239661 (1980-12-01), Muraoka et al.
patent: 4294911 (1981-10-01), Guild
patent: 4333862 (1982-06-01), Smith et al.

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