Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Reexamination Certificate
2008-06-12
2010-12-14
Chu, John S (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
C430S270100, C430S326000, C430S907000, C430S910000
Reexamination Certificate
active
07851140
ABSTRACT:
To provide a resist composition for negative tone development, which can form a pattern having a good profile improved in the pattern undercut and moreover, can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension, and a pattern forming method using the same.A resist composition for negative tone development, comprising (A) a resin capable of increasing the polarity by the action of an acid to increase the solubility in a positive tone developer and decrease the solubility in a negative tone developer, (B) a compound capable of generating an acid having an acid dissociation index pKa of −4.0 or less upon irradiation with an actinic ray or radiation, and (C) a solvent; and a pattern forming method using the same.
REFERENCES:
patent: 5738975 (1998-04-01), Nakano et al.
patent: 5866304 (1999-02-01), Nakano et al.
patent: 2003/0022095 (2003-01-01), Kai et al.
patent: 2003/0148211 (2003-08-01), Kamabuchi et al.
patent: 2005/0266336 (2005-12-01), Kodama
patent: 2006/0154188 (2006-07-01), Hirayama et al.
patent: 1635218 (2006-03-01), None
patent: 06-194847 (1994-07-01), None
patent: 07-049568 (1995-02-01), None
patent: 07-199467 (1995-08-01), None
patent: 7-261392 (1995-10-01), None
patent: 2000-199953 (2000-07-01), None
patent: 2001-109154 (2001-04-01), None
patent: 2001-215731 (2001-08-01), None
patent: 2003-76019 (2003-03-01), None
patent: 2003-162061 (2003-06-01), None
patent: 2003-231673 (2003-08-01), None
patent: 2004-012554 (2004-01-01), None
patent: 2004-026789 (2004-01-01), None
patent: 2005-221721 (2005-08-01), None
patent: 2006-84530 (2006-03-01), None
patent: 2006-091421 (2006-04-01), None
patent: 2006-156422 (2006-06-01), None
patent: 2006-227174 (2006-08-01), None
patent: 2006-258925 (2006-09-01), None
patent: 2006-350212 (2006-12-01), None
Notification of Reasons for Refusal in counterpart Japanese Application No. 2009-519307, dated Mar. 30, 2010.
Sungkoo Lee, et al.; “Double Exposure Technology using silicon containing materials”; Advances in Resist Technology and Processing XXIII; Proceedings of SPIE vol. 6153, 2006, pp. 1-7.
M. Maenhoudt, et al; “Double Patenting Scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193nm”, Optical Microlithography, XVIII, Proceedings of SPIE vol. 5754, 2005; pp. 1508-1518, English.
Steven R. J. Brueck; “Extension of 193-nm immersion optical lithography to the 22-nm half-pitch node”; Optical Microlithography XVII, Proceedings of SPIE vol. 5377; 2004; pp. 1315-1322, English.
International Search Report (PCT/ISA/210) issued for PCT/JP2008/060799, dated Jul. 8, 2008.
PCT/ISA/237 issued for PCT/JP2008/060799, dated Jul. 8, 2008.
Chu John S
FUJIFILM Corporation
Sughrue & Mion, PLLC
LandOfFree
Resist composition for negative tone development and pattern... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resist composition for negative tone development and pattern..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist composition for negative tone development and pattern... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4155795