Resist composition and process for forming resist pattern

Details Resist composition and process for forming resist pattern Resist composition and process for forming resist pattern

1992-09-17

1996-12-17

Dote, Janis L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

4302701, 430325, 430326, 430330, 430910, 430942, 430945, 430966, 430967, G03F 730, G03F 738, G03C 500

Patent

active

055852220

ABSTRACT:
A resist composition and a process for forming a resist pattern using a resist composition are disclosed. The present composition includes 100 parts by weight of a copolymer of a 2-norbornene-2-substituent unit and an acrylic acid ester unit of the formula I; ##STR1## wherein, X is a cyano or chloro group, R is tert-butyl, dimethylbenzyl, or tetrahydropyranyl, m is an integer of 9 to 2390, and n is an integer of 21 to 5180, and 1 to 20 parts by weight of a photo acid generator. A finely-resolved resist pattern with high sensitivity and good dry etch resistance is obtained by the present composition and present process for forming the resist pattern.

REFERENCES:
patent: 4751168 (1988-06-01), Tsuchiya et al.
patent: 4912018 (1990-03-01), Osuch et al.
patent: 5118585 (1992-06-01), Schwalm et al.
patent: 5212043 (1993-05-01), Yamamoto et al.
Ito et al. ACS Symp. Ser. (1989), 412, "Polymers in Microlithography," pp. 57 to 73.

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