Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Patent
1993-02-25
1994-05-31
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
257712, 257717, 257720, 257723, 257796, H01L 2302, H01L 2504, H01L 2328, H01L 2312
Patent
active
053171942
ABSTRACT:
The present invention relates to a semiconductor device sealed by a resin and, more particularly, to a semiconductor device for reducing a production cost and effectively radiating heat generated from a semiconductor element. For this reason, a silicon chip in which an insulating layer is formed between the surface of the silicon chip and a conductive layer is arranged between a heat sink and a semiconductor element. The silicon chip insulates the semiconductor element from the heat sink and transmits heat generated from the semiconductor element to the heat sink. The silicon chip can be manufactured in a line for manufacturing the semiconductor element, and the silicon chip can be assembled with the semiconductor element.
REFERENCES:
patent: 3471752 (1969-10-01), Pfander et al.
patent: 4322735 (1982-06-01), Sadamasa et al.
patent: 4654692 (1987-03-01), Sakurai et al.
patent: 4698662 (1987-10-01), Young et al.
patent: 4705606 (1987-11-01), Young et al.
James Andrew J.
Jr. Carl Whitehead
Kabushiki Kaisha Toshiba
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