Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1998-12-24
2000-12-26
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257787, 257788, 257794, 257693, 257783, 257778, H01L 2348, H01L 2314, H01L 2328
Patent
active
061664332
ABSTRACT:
The semiconductor device includes a semiconductor chip, an FPC tape for mounting the semiconductor chip thereto, a mold resin for protecting the semiconductor chip, and metal balls provided on the FPC tape for connecting the semiconductor chip to a circuit board. The mold resin has the glass transition temperature not lower than 200.degree. C., the coefficient of linear expansion in the range from 13 to 18 ppm/.degree. C., and Young's modulus in the range from 1500 to 3000 kg/mm.sup.2, whereby warpage of the semiconductor device is mitigated. The semiconductor device can also include a buffer layer. The semiconductor device can be manufactured by collectively molding a plurality of semiconductor chips mounted to the FPC tape and by cutting the molded article into individual semiconductor packages.
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Akasaki Hidehiko
Higashiyama Toshihisa
Honna Koji
Kojima Haruo
Kosakai Kazunari
Clark Jhihan B
Fujitsu Limited
Hardy David
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