Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2005-03-03
2009-02-24
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S676000, C257S686000, C438S107000, C438S108000, C438S109000
Reexamination Certificate
active
07495319
ABSTRACT:
There are provided a lead frame including a plurality of first external terminal portions5provided on a plane, inner lead portions6formed of back surfaces of the respective first external terminal portions and arranged so as to surround a region inside the inner lead portions, and second external terminal portions7formed of uppermost surfaces of convex portions positioned outside the respective inner lead portions; a semiconductor element2flip-chip bonded to the inner lead portions via bumps3; and an encapsulating resin4encapsulating surroundings of the semiconductor element and the inner lead portions. The first external terminal portions are arranged in a lower surface region of the encapsulating resin along a periphery of the region, and the second external terminal portions are exposed on an upper surface of the encapsulating resin. A plurality of terminals8for electrical connection are provided in a grid pattern in a region inside the first external terminal portions and exposed on a lower surface of the encapsulating resin. A plurality of semiconductor elements or coils and resistors can be incorporated, and further semiconductor devices can be stacked.
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Fujimoto Hiroaki
Fukuda Toshiyuki
Itou Kenichi
Minamio Masanori
Sahara Ryuichi
Coleman W. David
Hamre Schumann Mueller & Larson P.C.
Kim Su C
Panasonic Corporation
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