Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-22
2000-11-14
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257787, 257310, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
06147374&
ABSTRACT:
The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240.degree. C. to 400.degree. C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230.degree. C. to 300.degree. C.
REFERENCES:
patent: 5563762 (1996-10-01), Leung et al.
Lecture Collections in '96 Ferroelectric Film Memory Technique Forum, Science Forum, Inc., p. 4-4, lines 1-12, Ishihara, Jan. 26, 1996.
Epoxy Molding Compounds for Semiconductor devices, Thermosetting Resins, vol. 13, No. 4, p. 37, right column, lines 8-23, Ogata et al., 1992.
Packaging Technique for Surface Mount Type LSI Packages and Improvements in Its Reliability, p. 451, edited by Hitachi Ltd.
A Study of Package Cracking During the Reflow Soldering Process, "A" Edition, vol. 55, No. 510, Kitano et al., 1989-2.
Effects of Mold Compound Properties on Lead-on-Chip (LOC) Package Reliability Duing IR Reflow, 1996 Electronic Components and Technology Conference, Yang et al.
Isoda Keiko
Ogata Kiyoshi
Tanaka Jun
Clark Sheila V.
Hitachi , Ltd.
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