Residue-free plasma etch of high temperature AlCu

Details Residue-free plasma etch of high temperature AlCu Residue-free plasma etch of high temperature AlCu

1988-08-23

1990-04-10

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 1566591, 156665, 156666, H01L 21306, C23F 100

Patent

active

049157795

ABSTRACT:
A residue-free plasma etch of high temperature aluminum copper metallization is provided by the use of a single plasma etcher. The metallization layer is covered by a protective oxide layer. This structure is then placed in the single etcher and a vacuum is established. The protective oxide layer is then etched and without breaking the vacuum or removing the structure from the etcher the metal layer is also etched. This results in the etched surface being residue-free.

REFERENCES:
patent: 4030967 (1977-06-01), Ingrey
patent: 4062720 (1977-12-01), Alcorn et al.
patent: 4182646 (1980-01-01), Zajac
patent: 4333814 (1982-06-01), Kuyel
patent: 4637129 (1987-01-01), Dekits et al.
patent: 4717445 (1988-01-01), Leung
patent: 4790903 (1988-12-01), Sugano et al.

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