Replacement gate strained silicon finFET process

Details Replacement gate strained silicon finFET process Replacement gate strained silicon finFET process

2005-08-30

2005-08-30

Chaudhuri, Olik (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000

Reexamination Certificate

active

06936516

ABSTRACT:
An exemplary embodiment relates to a method of FinFET formation. The method can include providing a sacrificial fin structure, removing the sacrificial fin structure, and providing a strained silicon layer at the location of the removed sacrificial gate structure. The FinFET can include a strained-Si MOSFET channel region.

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