Replacement gate flow facilitating high yield and...

Details Replacement gate flow facilitating high yield and... Replacement gate flow facilitating high yield and...

2006-07-18

2006-07-18

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

Reexamination Certificate

active

07078282

ABSTRACT:
The present invention relates to the deposition of a layer above a transistor structure, causing crystalline stress within the transistor, and resulting in increased performance. The stress layer may be formed above a plurality of transistors formed on a substrate, or above a plurality of selected transistors.

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