Repair circuit of semiconductor memory device using anti-fuse

Static information storage and retrieval – Read/write circuit – Having fuse element

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365200, G11C 700

Patent

active

061282413

ABSTRACT:
A repair circuit of a semiconductor memory device includes a programming circuit operating independently from a high voltage supply, to replace a defective cell with a redundant cell using an anti-fuse, by generating a repair value based on an address signal being input to the memory device. The repair circuit includes an operation switch having an output for outputting a charge voltage in response to a charge/discharge signal; at least one programming circuit of a series connection of an anti-fuse and a transistor, connected between the output of the operation switch and ground, to set a programmed state of the anti-fuse according to the address signal; a supply for an externally generating a high voltage to the anti-fuse of the programming circuit; a first buffer, connected between the programming circuit and the operation switch, to transmit the charge voltage output to the programming circuit and to block the externally generated high voltage supplied to the programming circuit; a second buffer, connected between the programming circuit and the high-voltage supply, to transmit the externally generated high voltage and to block the charge voltage output to the programming circuit; and an output unit to output the repair value, the repair value being indicative of the programmed state set by the programming circuit. A bank selector may be connected between the programming circuit and ground, to select one bank of anti-fuses in response to a block address signal.

REFERENCES:
patent: 5724282 (1998-03-01), Loughmiller et al.
patent: 5781483 (1998-07-01), Shore
patent: 5825697 (1998-10-01), Gilliam et al.
patent: 5875144 (1999-02-01), Zheng
patent: 5956282 (1999-09-01), Casper
patent: 5978248 (1999-11-01), Marr et al.
patent: 6016264 (2000-01-01), Lin

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