Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2004-06-30
2009-08-18
Cao, Phat X (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S762000
Reexamination Certificate
active
07575991
ABSTRACT:
A metal oxide layer on a substrate is converted at least partly to a metal layer. At least part of the metal layer is covered by an oxidation resistant cover. The covered layer and underlying metal may be removed, for example, using acid.
REFERENCES:
patent: 6696345 (2004-02-01), Chau et al.
patent: 2005/0104112 (2005-05-01), Haukka et al.
patent: 2007/0172997 (2007-07-01), Yagishita et al.
U.S. Appl. No. 10/652,796, filed Aug. 28, 2003, Justin K. Brask et al.,A Method For Making A Semiconductor Device Having A High-K Gate Dielectric.
U.S. Appl. No. 10/805,880, filed Mar. 22, 2004, Uday Shah et al.,A Method For Making A Semiconductor Device With A Metal Gate Electrode.
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Kavalieros Jack
Cao Phat X
Intel Corporation
Trop Pruner & Hu P.C.
LandOfFree
Removing a high-k gate dielectric does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Removing a high-k gate dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Removing a high-k gate dielectric will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4059725