Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1996-02-26
1997-09-23
Powell, William
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566561, 216 18, 216 67, 216 38, 437228PL, H01L 2100, B44C 122, C23F 100
Patent
active
056700199
ABSTRACT:
This invention provides a method of cleaning integrated circuit wafers which effectively removes precipitates formed as a result of the tungsten etchback process. When tungsten is used to fill via holes in an inter-metal dielectric layer an adhesion layer of titanium nitride, TiN, is required to provide good adhesion. As a result of the tungsten etchback, wherein fluorine based etchants are used, precipitates of TiF.sub.3 can form which are extremely difficult to remove. Methods, such as in-situ bake after the tungsten etchback, are used to prevent the formation of the precipitates but do not remove them after they are formed. This invention teaches a method using a strong oxidizing agent, such as H.sub.2 O.sub.2, to cause an oxidation-reduction reaction which converts the precipitates to a water soluble form. The water soluble form of the precipitates are then removed using a water rinse and spin dry process.
REFERENCES:
patent: 4689113 (1987-08-01), Balasubramanyam et al.
patent: 4992135 (1991-02-01), Doan
patent: 5604158 (1997-02-01), Cadien et al.
S. Wolf, "Silicon Processing for the VLSI Era-vol. 1", Lattice Press, Sunset Beach, Ca, 1986, pp. 516-519.
Powell William
Prescott Larry J.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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