Removal of substrate perimeter material

Details Removal of substrate perimeter material Removal of substrate perimeter material

1993-08-09

1995-06-20

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437225, B44C 122

Patent

active

054258464

ABSTRACT:
Perimeter material is removed from substrates by stacking the substrates and subjecting them to a plasma etch. In an exemplary application, the perimeter of a silicon wafer dielectric cap (typically silicon nitride) is removed by stacking the wafers in intimate contact, and etching the wafers in a barrel etcher. A well-controlled removal of the cap perimeter is obtained, allowing for a smooth epitaxial deposition at the water edge in a subsequent operation. An additional benefit is smoothing of the substrate edge contour, which reduces scratching of wafer cassettes and other handling equipment.

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IBM Technical Disclosure Bulletin, vol. 20, No. 1, Jun. 1977, "Analytical Eetermination of Fe In Thin SiO2 Layers on Si Wafers by Atomic Absorption Spectroscopy".
Copy of European Search Report.

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