Removal of SOG etchback residue by argon treatment

Details Removal of SOG etchback residue by argon treatment Removal of SOG etchback residue by argon treatment

1998-09-08

2000-05-16

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438711, 438712, 438719, 438720, 438725, H01L 21308

Patent

active

060637099

ABSTRACT:
A process for etching back SOG during planarization is described. A mix of CHF.sub.3 and CF.sub.4 in an argon carrier gas is used, with the latter having a flow rate of about 175 SCCM. An RF discharge is initiated for about 10 seconds during which time etching occurs. The system is then cleared of all reactive gases by a brief pumpdown to base pressure. In a key feature of the invention, argon alone is now admitted to the reaction chamber at a greater than normal flow rate of about 273 SCCM. This high flow rate is maintained for about 40 seconds (including about 10 seconds to reach an equilibrium pressure of about 225 mtorr) following which the system is pumped out again and the process is terminated. If this procedure is followed, no polymeric residue is generated at the surface of any exposed titanium nitride.

REFERENCES:
patent: 5472825 (1995-12-01), Sayka
patent: 5631197 (1997-05-01), Yu et al.
patent: 5639345 (1997-06-01), Huang et al.
patent: 5679211 (1997-10-01), Huang
patent: 5702970 (1997-12-01), Choi
patent: 5786259 (1998-07-01), Kang

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