Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1998-08-13
2000-09-12
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
H01L 21302
Patent
active
061177962
ABSTRACT:
Silicon oxide is removed from an article employing a liquid composition containing a fluoride-containing compound, organic solvent, and water. The methods of the invention are especially useful for removal of silicon oxide formed by thermal oxidation of a silicon substrate.
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Gale Glenn W.
Jagannathan Rangarajan
Madden Karen P.
McCullough Kenneth J.
Okorn-Schmidt Harald F.
Anderson Matthew
Capella Steven
International Business Machines - Corporation
Utech Benjamin L.
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