Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1998-12-18
2000-10-31
Young, Christopher G.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430316, G03C 500
Patent
active
061400246
ABSTRACT:
A method is disclosed of nitridating an oxide layer (12) to form a stop layer for selective etching of sacrificial layer comprising the steps of, obtaining a wafer (10), forming a gate (30) on the wafer (10), depositing an oxide layer (12) on the wafer (10) and the gate (30), exposing the surface of the oxide layer (12) to a nitrogen ion containing plasma at, e.g., room temperature, wherein the nitrogen ions form a nitrided layer (22) on the oxide layer (12). Next, a silicate layer (32) is deposited on the nitrided layer (22), planarized and patterned with photoresist (14) for etching. The contacts or vias are then formed through the silicate layer (32) by etching down to the nitrided layer (22) that acts as a stop layer, followed by a second etching step that removes the nitrided layer (22). The photoresist (14) is then stripped and the silicon oxide layer (12) etch down to the wafer (10). The process of the present invention prevents the exposure of the wafer (10) to contaminants from the photoresist layer (14) and the etch chemicals that can deposit reactive radicals. These reactive radicals, also known as mobile ions, decrease the reliability of the device by contaminating subsequent layers or structures.
REFERENCES:
patent: 4620361 (1986-11-01), Matsukawa et al.
patent: 5143820 (1992-09-01), Kotecha et al.
Hattangady Sunil V.
Misium George R.
Brady III Wade James
Garner Jacqueline J.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
Young Christopher G.
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