Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2011-06-28
2011-06-28
Carrillo, Sharidan (Department: 1711)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S001100, C134S001300, C134S021000, C134S022100, C134S026000, C134S030000, C134S031000, C134S042000
Reexamination Certificate
active
07967913
ABSTRACT:
A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
REFERENCES:
patent: 4138306 (1979-02-01), Niwa
patent: 4563367 (1986-01-01), Sherman
patent: 4910042 (1990-03-01), Hokynar
patent: 4913929 (1990-04-01), Moslehi et al.
patent: 4960488 (1990-10-01), Law et al.
patent: 4988644 (1991-01-01), Jucha et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5158644 (1992-10-01), Cheung et al.
patent: 5346579 (1994-09-01), Cook et al.
patent: 5350480 (1994-09-01), Gray
patent: 5356478 (1994-10-01), Chen
patent: 5403434 (1995-04-01), Moslehi
patent: 5620526 (1997-04-01), Watatani et al.
patent: 5662770 (1997-09-01), Donohoe
patent: 5688357 (1997-11-01), Hanawa
patent: 5770098 (1998-06-01), Araki et al.
patent: 5788778 (1998-08-01), Shang et al.
patent: 5792272 (1998-08-01), van Os et al.
patent: 5812403 (1998-09-01), Fong et al.
patent: 5843239 (1998-12-01), Shrotriya
patent: 5844195 (1998-12-01), Fairbairn et al.
patent: 5939831 (1999-08-01), Fong et al.
patent: 5942804 (1999-08-01), Mohwinkel et al.
patent: 6039834 (2000-03-01), Tanaka et al.
patent: 6055927 (2000-05-01), Shang et al.
patent: 6060400 (2000-05-01), Oehrlein et al.
patent: 6079426 (2000-06-01), Subrahmanyam et al.
patent: 6109206 (2000-08-01), Maydan et al.
patent: 6125859 (2000-10-01), Kao et al.
patent: 6148832 (2000-11-01), Gilmer et al.
patent: 6170428 (2001-01-01), Redeker et al.
patent: 6182602 (2001-02-01), Redeker et al.
patent: 6217951 (2001-04-01), Mizuno et al.
patent: 6255222 (2001-07-01), Xia et al.
patent: 6274058 (2001-08-01), Rajagopalan et al.
patent: 6329297 (2001-12-01), Balish et al.
patent: 6374831 (2002-04-01), Chandran et al.
patent: 6379575 (2002-04-01), Yin et al.
patent: 6387207 (2002-05-01), Janakiraman et al.
patent: 6418874 (2002-07-01), Cox et al.
patent: 6435197 (2002-08-01), Shin et al.
patent: 6450117 (2002-09-01), Murugesh et al.
patent: 6584987 (2003-07-01), Cheng et al.
patent: 7159597 (2007-01-01), Hua et al.
patent: 2002/0020429 (2002-02-01), Selbrede et al.
patent: 2002/0033183 (2002-03-01), Sun et al.
patent: 2003/0029475 (2003-02-01), Hua et al.
patent: 2004/0045577 (2004-03-01), Ji et al.
patent: 2005/0258137 (2005-11-01), Sawin et al.
patent: 2006/0266288 (2006-11-01), Choi
patent: 2007/0248767 (2007-10-01), Okura et al.
patent: 2009/0090382 (2009-04-01), Morisada et al.
patent: 2009/0120464 (2009-05-01), Rasheed et al.
patent: 4132559 (1993-04-01), None
patent: 0537950 (1993-04-01), None
patent: 0552491 (1993-07-01), None
patent: 0697467 (1996-02-01), None
patent: 1-220434 (1989-09-01), None
patent: 2-125876 (1990-05-01), None
patent: 10-1999-0062820 (1999-07-01), None
patent: WO 97/03223 (1997-01-01), None
patent: WO 99/02754 (1999-01-01), None
patent: WO 99/03312 (1999-01-01), None
Grill, Alfred, “Cold Plasma in Materials Fabrication”, IEEE Press, 1994, pp. 109-110, 160-163.
Non-Final Office Action for U.S. Appl. No. 10/153,315; mailed on Dec. 8, 2004; pp. 12.
Final Office Action for U.S. Appl. No. 10/153,315; mailed on Aug. 23, 2005; pp. 9.
Non-Final Office Action for U.S. Appl. No. 10/153,315; mailed on Mar. 21, 2006; pp. 7.
Notice of Allowance for U.S. Appl. No. 10/153,315; mailed on Sep. 26, 2006; pp. 3.
International Search Report for PCT Application No. PCT/US2009/059878 mailed on Apr. 19, 2010; 2 pages.
Written Opinion for PCT Application No. PCT/US2009/059878 mailed on Apr. 19, 2010; 6 pages.
Gondhalekar Sudhir R.
Hua Zhong Qiang
Kamath Sanjay
Le Hien-Minh Huu
Lee Young S.
Applied Materials Inc.
Carrillo Sharidan
Kilpatrick Townsend & Stockton LLP
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