Reliable low-k interconnect structure with hybrid dielectric

Details Reliable low-k interconnect structure with hybrid dielectric Reliable low-k interconnect structure with hybrid dielectric

2005-07-12

2005-07-12

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000

Reexamination Certificate

active

06917108

ABSTRACT:
An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.

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