Organic compounds -- part of the class 532-570 series – Organic compounds – Oxygen containing
Patent
1998-12-07
2000-04-04
Nazario-Gonzalez, Porfirio
Organic compounds -- part of the class 532-570 series
Organic compounds
Oxygen containing
427252, 427587, 564275, 564278, 568307, 568331, 568412, 556117, C07C20500, C07F 108
Patent
active
060463643
ABSTRACT:
A process for recovering a 1,1,1,5,5,5-hexafluoro-2,4-pentanedione ligand from a metal-ligand complex byproduct such as Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2, comprising: providing a copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 in a process stream; cooling and condensing the copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 to separate it from the process stream; contacting the copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 with a protonation agent, such as: sulfuric acid, hydrochloric acid, hydroiodic acid, hydrobromic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, acid ion exchange resin, hydrogen sulfide, water vapor and mixtures thereof; and recovering 1,1,1,5,5,5-hexafluoro-2,4-pentanedione.
REFERENCES:
patent: 3356527 (1967-12-01), Moshier et al.
patent: 3594216 (1971-07-01), Charles et al.
patent: 5085731 (1992-02-01), Norman et al.
patent: 5098516 (1992-03-01), Norman et al.
patent: 5144049 (1992-09-01), Norman et al.
patent: 5187300 (1993-02-01), Norman et al.
patent: 5322712 (1994-06-01), Norman et al.
Removal of Byproducts from CVD Copper Effluent Streams, No. 41242, Research Disclosures, (Aug. 1998), pp. 1059-1061.
Temple, et al., Chemical Vapor Deposition of Copper from Copper (II) Hexafluoracetylacetonate, J. Electrochem. Soc. vol. 136, No. 11, Nov. 1989, pp. 3525-3529.
Kaloyeros, et al., Low-Temperature Metal-Organic Chemical Vapor Deposition ((LTMOCVD) of Device-Quality Copper Films for Microelectronic Applications, J. Electr. Mat., vol. 19, No. 3, 1990, pp. 271-276.
Van Hemert, et al. Vapor Deposition of Metals by Hydrogen Reduction of Metal Chelates, J. Electrochem. Soc., vol. 112, No. 11, Nov. 1965, pp. 1123-1126.
Oehr, et al., Thin Copper Films by Plasma CVD Using Copper-Hexafluoro-Acetylacetonate, Appl. Phys., A 45, (1988), pp. 151-154.
Gordon John Cameron
Norman John Anthony Thomas
Senzaki Yoshihide
Air Products and Chemicals Inc.
Chase Geoffrey L.
Nazario-Gonzalez Porfirio
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