Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1995-05-14
1997-08-05
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Data refresh
365149, 365193, 365227, 365228, 36523003, G11C 700
Patent
active
056549296
ABSTRACT:
An improved method of accessing dynamic random access memory (DRAM) banks during refresh cycles contemplates sequentially accessing DRAM banks which do not share common filtering capacitors. In this manner, voltage drops caused by refresh accesses are not observed in consecutive clock cycles at the same filtering capacitors so that the filtering capacitors will have sufficient recovery time to restore the supply voltage to the original voltage level before another refresh hit occurs at the same capacitor. In this manner, significant voltage drops are alleviated at the voltage supply inputs to the DRAM banks.
REFERENCES:
patent: 5475645 (1995-12-01), Wada
patent: 5500831 (1996-03-01), Chen et al.
Samsung Electronics Co,. Ltd.
Yoo Do Hyun
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