X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1990-12-28
1991-09-24
Fields, Carolyn E.
X-ray or gamma ray systems or devices
Specific application
Lithography
378 34, 378 84, G21K 500
Patent
active
050520334
ABSTRACT:
A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.
REFERENCES:
patent: 4411013 (1983-10-01), Takasu et al.
patent: 4693933 (1987-09-01), Keen et al.
patent: 4923772 (1990-05-01), Kirch et al.
Underwood et al., "The Renaissance of X-Ray Optics", Physics Today, pp. 44-52, Apr. 1984.
Spiller, "Low Loss Reflection Coatings Using Absorbing Materials," Appl. Phys. Lett., vol. 20, No. 9, May 1972, pp. 365-367.
Vidal et al., "Metallic Multilayers for X-Rays Using Classical Thin-Film Theory," App. Optics, vol. 23, No. 11 (Jun. 1984), pp. 1794-1801.
Matsumura et al., "Demagnified Projection Printing by a New X-Ray Lithographic Technique Using No Thin-Film Masks", Appl. Phys. Lett., vol. 45, No. 1, Jul. 1984, pp. 3-5.
Patent Abstracts of Japan, vol. 10, No. 19, Kokai 60-173,551, Sep. 1985.
Matsumura, "Theoretical Consideration on New Reflection Type X-Ray Lithography", Extended Abstract of the 18th Conference on Solid Stage Devices and Materials, Tokyo, 1986, pp. 17-20.
Fukuda Yasuaki
Hayashida Masami
Iizuka Takashi
Ikeda Tsutomu
Niibe Masahito
Canon Kabushiki Kaisha
Fields Carolyn E.
Porta David P.
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