Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-10-10
2006-10-10
Tran, Michael (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189090
Reexamination Certificate
active
07120045
ABSTRACT:
A reference voltage generating apparatus and a driving method therefor are provided. The method of driving the reference voltage generating apparatus for supplying a reference voltage to read data from a ferroelectric memory cell including a ferroelectric capacitor and an access transistor comprises: re-storing, in a reference cell, data equal to data stored in the reference cell, in response to a first control signal, and generating a reference voltage, in the re-stored reference cell, in response to a second control signal, to compare the reference voltage with a voltage corresponding to data stored in the ferroelectric memory cell and to read the data stored in the ferroelectric memory cell. The reference cell includes a ferroelectric capacitor and an access transistor.
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Jeon Byung-Gil
Lee Kang-Woon
Min Byung-Jun
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Tran Michael
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