Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-01-22
2008-01-22
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
11284299
ABSTRACT:
An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.
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Shi Xizeng
Wang Po-Kang
Yang Hsu Kai
Ackerman Stephen B.
Applied Spintronics Inc.
Dinh Son
Knowles Billy
MagIC Technologies, Inc.
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