Redundant barrier structure for interconnect and wiring...

Details Redundant barrier structure for interconnect and wiring... Redundant barrier structure for interconnect and wiring...

2011-04-19

2011-04-19

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23010, C257SE21476, C257S774000, C257S680000, C257S700000, C257S701000, C257S758000, C257S762000, C257S765000, C257S763000

Reexamination Certificate

active

07928569

ABSTRACT:
A redundant diffusion barrier structure and method of fabricated is provided for interconnect and wiring applications. The structure can also be a design structure. The structure includes a first liner lining at least one of a trench and a via and a second liner deposited over the first liner. The second liner comprises RuX. X is at least one of Boron and Phosphorous. The structure comprises a metal deposited on the second liner in the at least one trench and via to form a metal interconnect or wiring.

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J. Ekerdt, et al.; “Chemical Vapor Deposition of Amorphous Ruthenium-Phosphorus Alloy Films for Cu Interconnect Applications”; Conference Proceedings AMC XXIII copy right 2008 Materials Research Society; pp. 179-185.

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