Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2008-01-08
2008-01-08
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S225700
Reexamination Certificate
active
07317645
ABSTRACT:
A redundancy repair circuit and method therefor for use with a semiconductor memory device are provided. The redundancy repair circuit comprises: a memory circuit having a plurality of address lines and a plurality of redundancy address lines in a memory cell; a repair redundancy control circuit for repairing a defective address line using a redundancy address line of the plurality of redundancy address lines, and for encoding and outputting fuse repair information corresponding to redundancy address information, wherein addresses corresponding to defective memory cells are pre-programmed; and a redundancy line driver for receiving the fuse repair information from the repair redundancy control circuit, for decoding the fuse repair information and for activating a redundancy line corresponding to the decoded fuse repair information, wherein the repair redundancy control circuit is separate from the redundancy line driver.
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Kim Chi-wook
Kim Jun-Hyung
Seo Sung-Min
F. Chau & Assoc. LLC
Ho Hoai V.
Samsung Electronics Co,. Ltd.
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