Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1998-12-03
1999-11-16
Dinh, Son T.
Static information storage and retrieval
Read/write circuit
Bad bit
371 101, G11C 700
Patent
active
059869526
ABSTRACT:
Addressable first units having ROM memory cells, for example word or bit lines, can be replaced by redundant second units having RAM memory cells. This has the advantage that the RAM memory cells can be realized with a smaller area than alternative PROM memory cells. The invention can be applied particularly advantageously to DROM memories.
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Bernauer Klaus
Breilmann Jochen
Bromba Manfred
McConnell Roderick
Plattner Eckehard
Dinh Son T.
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
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