Reduction of pad erosion

Details Reduction of pad erosion Reduction of pad erosion

1997-09-30

1999-05-25

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438692, 438700, H01L 218242

Patent

active

059077719

ABSTRACT:
Improved technique of forming trench capacitors without causing excessive erosion at the edges of the array region resulting from polishing. The erosion is reduced by providing a block mask to protect the array region while partially removing a portion of the hard mask used to etch the trenches in the field region. The partial etch equalizes the height of the hard mask in the array and field region after formation of the deep trenches by a reactive ion etch.

REFERENCES:
patent: 4939104 (1990-07-01), Pollack et al.
patent: 5380674 (1995-01-01), Kimura et al.

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