Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-07-31
2007-07-31
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S639000, C438S668000, C438S702000, C257SE23175, C257SE21232, C257SE21235, C257SE21238
Reexamination Certificate
active
10648953
ABSTRACT:
A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
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Chen Wan-Lin
Hudson Eric A.
Kang Sean S.
Lee Sang-heon
Reza Sadjadi S. M.
Beyer & Weaver, LLP
Lam Research Corporation
Maldonado Julio J
Smith Matthew
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