Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2003-12-08
2010-06-15
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C257S369000, C257S408000, C257SE21135, C257SE21466, C438S289000, C438S301000, C438S369000, C438S559000
Reexamination Certificate
active
07737014
ABSTRACT:
A stressed film applied across a boundary defined by a structure or a body (e.g. substrate or layer) of semiconductor material provides a change from tensile to compressive stress in the semiconductor material proximate to the boundary and is used to modify boron diffusion rate during annealing and thus modify final boron concentrations. In the case of a field effect transistor, the gate structure may be formed with or without sidewalls to regulate the location of the boundary relative to source/drain, extension and/or halo implants. Different boron diffusion rates can be produced in the lateral and vertical directions and diffusion rates comparable to arsenic can be achieved. Reduction of junction capacitance of both nFETs and pFETs can be achieved simultaneously with the same process steps.
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Buehrer Frederick William
Chidambarrao Dureseti
Doris Bruce B.
Huang Hsiang-Jen
Yang Haining
Abate Joseph P.
International Business Machines - Corporation
Sarkar Asok K
Whitham Curtis Christofferson & Cook, P.C.
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