Reduction of black silicon in semiconductor fabrication

Details Reduction of black silicon in semiconductor fabrication Reduction of black silicon in semiconductor fabrication

1997-12-29

2000-03-07

Gulakowski, Randy

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438758, 438778, 438780, 438787, 438791, H01L 21027

Patent

active

060339977

ABSTRACT:
Reduction of black silicon is achieved by providing a dielectric layer in at least the bead region of the wafer before the formation of a hard etch mask.

REFERENCES:
patent: 5229318 (1993-07-01), Straboni et al.
patent: 5298442 (1994-03-01), Bulucea et al.

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