Reducing resistivity in interconnect structures by forming...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S774000, C257SE23145

Reexamination Certificate

active

07612451

ABSTRACT:
An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, and a damascene structure in the opening. The damascene structure includes a metallic barrier layer in the opening and in physical contact with the dielectric layer, a conductive material filling the remaining part of the opening, and an interlayer between and adjoining the metallic barrier layer and the conductive material. The interlayer is preferably a metal compound layer.

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Prater, W. L., “Reduction of Resistivity in Cu Thin Films by Partial Oxidation: Microstructural Mechanisms,” Applied Physics Letters, vol. 84, No. 14, Apr. 5, 2004, pp. 2518-2520.

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