Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-07-13
2009-11-03
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000, C257SE23145
Reexamination Certificate
active
07612451
ABSTRACT:
An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, and a damascene structure in the opening. The damascene structure includes a metallic barrier layer in the opening and in physical contact with the dielectric layer, a conductive material filling the remaining part of the opening, and an interlayer between and adjoining the metallic barrier layer and the conductive material. The interlayer is preferably a metal compound layer.
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Hsieh Ching-Hua
Huang Cheng-Lin
Shih Chih-Chao
Shue Shau-Lin
Purvis Sue
Sandvik Ben P
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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