Reducing memory failures in integrated circuits

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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Details

C365S201000, C365S225700, C365S145000, C714S710000, C714S764000, C714S006130, C714S006130, C714S006130

Reexamination Certificate

active

10250211

ABSTRACT:
Memory reliability is improved by using redundancy to repair errors detected by ECC. In one embodiment, redundancy repairs errors which cannot be corrected by ECC. The redundancy can employ the use of electronic fuses, enabling repairs after an IC containing the memory is packaged. Redundancy can also be performed prior to packaging of the IC.

REFERENCES:
patent: 4493075 (1985-01-01), Anderson et al.
patent: 4768193 (1988-08-01), Takemae
patent: 4939694 (1990-07-01), Eaton et al.
patent: 5134616 (1992-07-01), Barth et al.
patent: 5278847 (1994-01-01), Helbig et al.
patent: 5463244 (1995-10-01), De Araujo et al.
patent: 5903492 (1999-05-01), Takashima
patent: 6704228 (2004-03-01), Jang et al.
patent: 6751137 (2004-06-01), Park et al.
patent: 2004/0095798 (2004-05-01), Wohlfahrt et al.
Taylor et al., “A 1-Mbit CMOS Dynamic RAM with Divided Bitline Matrix Architecture”, IEEE Journal of Solid-State Circuits, vol. SC-20, No. 5, Oct. 1985, p. 894-902.

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