Reducing hydrogen concentration in pecvd amorphous silicon carbi

Details Reducing hydrogen concentration in pecvd amorphous silicon carbi Reducing hydrogen concentration in pecvd amorphous silicon carbi

1996-10-24

1998-09-01

Niebling, John

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427574, 427577, 427578, 438479, 438931, H01L 2120

Patent

active

058008780

ABSTRACT:
The present invention provides a plasma enhanced chemical vapor deposition method and apparatus for reducing the hydrogen concentration in amorphous silicon carbide films deposited on a substrate. The process combines a noble gas such as helium with a silicon source such as silane and a carbon source such as methane in the reaction zone of a CVD chamber. The resulting silicon carbide films have a low concentration of hydrogen and high compressive stress. The films are preferably produced with a plasma generated by a mixture of high and low radio frequency.

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